new product bu1006a thru bu1010a vishay general semiconductor document number: 84800 revision: 08-jan-09 for technical questions within your r egion, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com www.vishay.com 1 enhanced power bridge rectifiers features ? ul recognition file number e309391 (qqqx2) ul 1557 (see *) ? thin single in-line package ? available for bu-5s lead forming option (part number with ?5s? suffix, e.g. bu1006a5s) ? superior thermal conductivity ? solder dip 260 c, 40 s ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec typical applications general purpose use in ac-to-dc bridge full wave rectification for switch ing power supply, home appliances and white-goods applications. mechanical data case: bu terminals: matte tin plated leads, solderable per j-std-002 and jesd22-b102 e3 suffix for consumer grade, meets jesd 201 class 1a whisker test polarity: as marked on body mounting torque: 10 cm-kg (8.8 inches-lbs) max. recommended torque: 5.7 cm-kg (5 inches-lbs) * tested to ul standard for safety electrically isolated semiconductor devices. ul 1557 4th edition. dielectric tested to maximum case, storage and junction temperature to 150 c to withstand 1500 v. epoxy meets ul 94 v-0 flammability rating. primary characteristics i f(av) 10 a v rrm 600 v, 800 v, 1000 v i fsm 90 a i r 5 a v f at i f = 5 a 0.94 v t j max. 150 c + ~ ~ - - ~ ~ + case style bu + ~~ - powerbrid g e tm notes: (1) with 60 w air cooled heatsink (2) without heatsink, free air maximum ratings (t a = 25 c unless otherwise noted) parameter symbol bu1006a bu1008a bu1010a unit maximum repetitive peak reverse voltage v rrm 600 800 1000 v average rectified forward current (fig. 1, 2) t c = 90 c (1) t a = 25 c (2) i o 10 3.0 a non-repetitive peak forward surge current 8.3 ms single sine-wave, t j = 25 c i fsm 90 a rating for fusing (t < 8.3 ms) t j = 25 c i 2 t 33 a 2 s operating junction and storage temperature range t j , t stg - 55 to + 150 c
new product bu1006a thru bu1010a vishay general semiconductor www.vishay.com for technical questions within your region, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com document number: 84800 revision: 08-jan-09 2 note: (1) pulse test: 300 s pulse width, 1 % duty cycle notes: (1) with 60 w air cooled heatsink (2) without heatsink, free air ratings and characteristics curves (t a = 25 c unless otherwise noted) electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol typ. max. unit maximum instantaneous forward voltage per diode (1) i f = 5.0 a t a = 25 c t a = 125 c v f 1.02 0.94 1.10 1.00 v maximum reverse current per diode rated v r t a = 25 c t a = 125 c i r - 45 5.0 250 a typical junction capacitance per diode 4.0 v, 1 mhz c j 30 - pf thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol bu1006a bu1008a bu1010a unit typical thermal resistance r jc (1) r ja (2) 3.0 20 c/w ordering information (example) preferred p/n unit weight (g) preferred package code base quantity delivery mode bu1006a-e3/45 4.48 45 20 tube bu1006a-e3/51 4.48 51 250 paper tray bu1006a5s-e3/45 4.48 45 20 tube figure 1. derating curve output rectified current 0 20 8 0 160 0 2 4 6 8 12 case temperat u re (c) a v erage for w ard o u tp u t c u rrent (a) w ith heatsink sine- w a v e, r-load t c meas u red at de v ice bottom t c t c 10 40 100 60 120 140 figure 2. forward current derating curve 0 1 2 3 4 am b ient temperat u re (c) a v erage for w ard rectified c u rrent (a) 0 50 25 75 100 125 150 w itho u t heatsink sine- w a v e, r-load free air, t a
new product bu1006a thru bu1010a vishay general semiconductor document number: 84800 revision: 08-jan-09 for technical questions within your r egion, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com www.vishay.com 3 figure 3. forward power dissipation figure 4. typical forward characteristics per diode 01234567 8 91011 0 4 8 12 16 20 24 a v erage for w ard c u rrent (a) for w ard po w er dissipation ( w ) 0.2 1.0 1.2 1.4 0.01 10 0.1 1 100 0.4 0.6 0. 8 instantaneo u s for w ard v oltage ( v ) instantaneo u s for w ard c u rrent (a) t j = 150 c t j = 125 c t j = 25 c figure 5. typical reverse characteristics per diode figure 6. typical juncti on capacitance per diode 1000 20 10 60 40 30 50 70 90 100 8 0 0.01 0.1 1 10 100 percent of rated peak re v erse v oltage ( % ) instantaneo u s re v erse c u rrent ( a) t j = 150 c t j = 125 c t j = 25 c 0.1 1 10 100 10 100 re v erse v oltage ( v ) j u nction capacitance (pf)
new product bu1006a thru bu1010a vishay general semiconductor www.vishay.com for technical questions within your region, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com document number: 84800 revision: 08-jan-09 4 package outline dimensions in inches (millimeters) + - ~~ case type bu 0. 88 0 (22.3) 0. 8 60 (21. 8 ) 0.160 (4.1) 0.140 (3.5) 0.075 (1.9) r 0.125 (3.2) x 45 chamfer 0.0 8 0 (2.03) 0.060 (1.52) 0.050 (1.27) 0.040 (1.02) 0.190 (4. 8 3) 0.210 (5.33) 0.0 8 0 (2.03) 0.065 (1.65) 0.100 (2.54) 0.0 8 5 (2.16) 0.0 8 5 (2.16) 0.065 (1.65) 0.310 (7.9) 0.290 (7.4) 0.020r (typ.) polarity sho w n on front side of case, positi v e lead b e v eled corner 0.64 (16.2 8 ) ref. 0.62 (15.7 8 ) ref. 0.055 (1.3 8 5) ref. r 0.10 (2.60) ref. r 0.11 (2.7 8 ) ref. 0.094 (2.39) x 45 ref. 0.055 (1.3 8 5) ref. 0.161 (4.10) 0.142 (3.60) 0.710 (1 8 .0) 0.690 (17.5) 0.02 8 (0.72) 0.020 (0.52) 0.740 (1 8 . 8 ) 0.720 (1 8 .3) v ie w a 0.04 8 (1.23) 0.039 (1.00) 5 typ. 9 typ.
new product bu1006a thru bu1010a vishay general semiconductor document number: 84800 revision: 08-jan-09 for technical questions within your r egion, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com www.vishay.com 5 forming specification: bu-5s in inches (millimeters) application note (1) device ul approved for safety use dielectric strength of 1500 v. (2) if device is mounted in floating ground (f. g.) application, insulator is recommended to use to meet safety requirement. (3) heat sink shape recommendation: 0.0 8 5 (2.16) 0.065 (1.65) 0.310 (7.9) 0.290 (7.4) 0.020r (typ.) 0.100 (2.54) 0.0 8 5 (2.16) 0.160 (4.1) 0.140 (3.5) 0. 88 0 (22.3) 0. 8 60 (21. 8 ) 0.125 (3.2) x 45 chamfer 0.075 (1.9) r + - ~~ 0.0 8 0 (2.03) 0.060 (1.52) 0.050 (1.27) 0.040 (1.02) 0.213 (5.40) 0.173 (4.40) 0.417 (10.60) 0.370 (9.40) 0.0 8 0 (2.03) 0.065 (1.65) 0.319 ( 8 .10) 0.272 (6.90) 0.319 ( 8 .10) 0.272 (6.90) 0.315 ( 8 .0) 0.276 (7.0) 0.02 8 (0.72) 0.020 (0.52) 0.219 (5.55) max. 0.161 (4.10) 0.142 (3.60) 0.740 (1 8 . 8 ) 0.720 (1 8 .3) 5 typ. 9 typ. 0.134 (3.40) 0.0 8 7 (2.20) 2.5 mm mi n . 2.5 mm mi n . by safety re qu irements heatsink (3)
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